EPC advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. Hp 1020 driver download for mac. Key wondershare data recovery for mac. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

Epc Gan Fets

Ferrites and accessoriesRM 4, RM 4 LPCores and accessoriesSeries/Type:Date:B65803, B65804, B65806, B65539September 2006/October 2007/January 2010Data Sheet. Oct 01, 2020 The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge (Q G ) is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge (Q RR ), enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives. The EPC2218 is an 3.2mΩ, 231A pulsed eGaN FET and the EPC2204 is a 6mΩ, 125A pulsed eGaN FET. They both have nearly 20% lower RDS(on) and increased DC ratings compared with earlier generation eGaN FET products. According to EPC, the performance advantage over a benchmark silicon device is even higher than previous eGaN FETs.

The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lower RDS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge, enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.

The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lower RDS (on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher. The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. With 5V on the gate, EPC2204 has a typical Rds(on) of 4.5mΩ, 5.7nC gate charge, 800pC gate-drain charge (50V across drain-source), 25nC Qoss (also at 50V) and zero reverse recovery charge, all.

Price and Availability

EPC2218 $2.09 EPC90123 $118.75
EPC2204 $0.99 EPC9097 $118.75

EPC advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lower RDS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.

The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge, enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.

Epc2047

Price and Availability: EPC2218 $2.09 EPC90123 $118.75; EPC2204 $0.99 EPC9097 $118.75.

Epc2104 Datasheet